Dual-band infrared focal plane arrays

被引:7
|
作者
Rogalski, A [1 ]
机构
[1] Mil Univ Technol, Inst Phys Appl, PL-00908 Warsaw, Poland
关键词
n-P-N HgCdTe photodiodes; QWIPs; dual-band detectors; sequential and simultaneous operations; focal plane arrays;
D O I
10.1117/12.407710
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
As the infrared technology continues to advance, there is a growing demand for multispectral detectors for advanced IR systems with better target discrimination and identification. Both HgCdTe detectors and quantum well GaAs/AlGaAs photodetectors offer wavelength flexibility from medium wavelength to very long wavelength and multicolor capability in these regions. The main challenges facing all multicolor devices are more complicated device -structures, thicker and multilayer material growth, and more difficult device fabrication, especially when the array size gets larger and pixel size gets smaller. In the paper recent progress in development of two-color HgCdTe photodiodes and quantum well infrared photodetectors is presented.
引用
收藏
页码:1 / 14
页数:14
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