Simulation of fast room-temperature bonding by mechanical interlock structure applied for 3D integration

被引：0
|
作者：
Liu, Ziyu [1 ]
Gong, Yaomin [1 ]
Chen, Lin [1 ]
Sun, Qingqing [1 ]
Zhang, Wei [1 ]
机构：
[1] Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R China
来源：
2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM) | 2021年
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1109/EDTM50988.2021.9420862
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A mechanical interlock Cu-Sn bonding for multi-chip 3D integration is proposed to save total bonding time and lower bonding temperature. Protrusion Cu width, recess width were optimized based on strain and stress simulation. Bonding pressure, annealing temperature, and shear stress after mechanical interconnection were studied for the process condition. Then optimal design was proposed finally.
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收藏
页数：3
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