Dielectric material impact on capacitive RF MEMS reliability

被引：0
|
作者：
Lisec, T [1 ]
Huth, C [1 ]
Wagner, B [1 ]
机构：
[1] Fraunhofer Inst Silicon Technol, ISIT, D-25524 Itzehoe, Germany
来源：
34TH EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, CONFERENCE PROCEEDINGS | 2004年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The influence of different types of dielectrics on the switching behaviour and reliability of capacitive RF MEMS switches fabricated by metal surface-micromachining is investigated. Sputtered AIN layers are compared to PECVD Si3N4 and Ta2O5 layers. It has been found that switches with sputtered AIN can be operated without failure in a wide range of driving conditions. Besides the dielectric charging problem another degradation has been observed independent of the dielectric material. The effect only occurs for operation in ambient air and is probably caused by an electrochemical reaction.
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页码：73 / 76
页数：4
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