Electrostatically-tunable analog RF MEMS varactors with measured capacitance range of 300%

被引：0
|
作者：
Peroulis, D [1 ]
Katehi, LPB [1 ]
机构：
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Radiat Lab, Ann Arbor, MI 48109 USA
来源：
2003 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2003年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reports on the design, fabrication; and testing of a novel analog MEMS varactor with measured tuning range of 300%. The proposed electrostatically actuated varactor is based on a parallel-plate approach and is best suited for microwave/millimeter-wave applications. The measured capacitance values are in the range of 40160 fF and are achieved with DC voltages of 20-34 V. The proposed varactor has the additional advantages of very high resonant frequency (its series measured parasitic inductance is 9 pH) and high quality factor (higher than 80 at 40 GHz).
引用
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页码：1793 / 1796
页数：4
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