GaN-based electronics: Material and device issues

被引：5
|
作者：
Kordos, P [1 ]
机构：
[1] Forschungszentrum Julich, Inst Thin Film & Ion Technol, ISI, D-52425 Julich, Germany
来源：
ASDAM 2000: THIRD INTERNATIONAL EUROCONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS - CONFERENCE PROCEEDINGS | 2000年
关键词：
D O I：
10.1109/ASDAM.2000.889450
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Key issues related to the material structure and device processing of AlGaN/GaN HEMTs for applications in high-frequency and high-power electronics are discussed. Simultaneously results on selected issues like highly resistive GaN buffers, AlGaN/GaN 2DEG structures, low-resistive ohmic contacts and efficient Schottky barrier contacts, as well as photoelectrochemical wet etching of GaN are presented. Finally, preparation and properties of the AlGaN/GaN Round-HEMT, which is a simple device suitable for. fast material structure characterization, are presented.
引用
收藏
页码：47 / 54
页数：8
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