Novel high-voltage power device based on self-adaptive interface charge

被引：8
|
作者：
Wu Li-Juan [1 ,2 ]
Hu Sheng-Dong [3 ]
Zhang Bo [1 ]
Li Zhao-Ji [1 ]
机构：
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
[2] Chengdu Univ Informat Technol, Coll Commun Engn, Chengdu 610225, Peoples R China
[3] Chongqing Univ, Coll Commun Engn, Chongqing 400044, Peoples R China
来源：
CHINESE PHYSICS B | 2011年 / 20卷 / 02期
基金：
中国国家自然科学基金;
关键词：
self-adaptive interface charge; inversion holes; dielectric layer electric field; breakdown voltage; BREAKDOWN VOLTAGE; PARTIAL SOI; LAYER;
D O I：
10.1088/1674-1056/20/2/027101
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
This paper presents a novel high-voltage lateral double diffused metal-oxide semiconductor (LDMOS) with self-adaptive interface charge (SAC) layer and its physical model of the vertical interface electric field. The SAC can be self-adaptive to collect high concentration dynamic inversion holes, which effectively enhance the electric field of dielectric buried layer (E-inverted perpendicular) and increase breakdown voltage (BV). The BV and E-inverted perpendicular of SAC LDMOS increase of 612 V and 600 V/mu m from 204 V and 90.7 V/mu m of the conventional silicon-on-insulator, respectively. Moreover, enhancement factors of eta which present the enhanced ability of interface charge on E-I are defined and analysed.
引用
收藏
页数：8
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