Novel high-voltage power device based on self-adaptive interface charge

This paper presents a novel high-voltage lateral double diffused metal-oxide semiconductor (LDMOS) with self-adaptive interface charge (SAC) layer and its physical model of the vertical interface electric field. The SAC can be self-adaptive to collect high concentration dynamic inversion holes, which effectively enhance the electric field of dielectric buried layer (E-inverted perpendicular) and increase breakdown voltage (BV). The BV and E-inverted perpendicular of SAC LDMOS increase of 612 V and 600 V/mu m from 204 V and 90.7 V/mu m of the conventional silicon-on-insulator, respectively. Moreover, enhancement factors of eta which present the enhanced ability of interface charge on E-I are defined and analysed.