Transient dynamics of a single molecular transistor in the presence of local electron-phonon and electron-electron interactions and quantum dissipation
We consider a single molecular transistor in which a quantum dot with local electron-electron and electron-phonon interactions is coupled to two metallic leads, one of which acts like a source and the other like a drain. The system is modeled by the Anderson-Holstein (AH) model. The quantum dot is mounted on a substrate that acts as a heat bath. Its phonons interact with the quantum dot phonons by the Caldeira-Leggett interaction giving rise to dissipation in the dynamics of the quantum dot system. A simple canonical transformation exactly treats the interaction of the quantum dot phonons with the substrate phonons. The electron-phonon interaction of the quantum dot is eliminated by the celebrated Lang-Firsov transformation. The time-dependent current is finally calculated by the Keldysh Green function technique with various types of bias. The transient-time phase diagram is analysed as a function of the system parameters to explore regions that can be used for fast switching in devices like nanomolecular switches.
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Univ Roma Tor Vergata, Dipartimento Fis, Ist Nazl Fis Mat, I-00133 Rome, ItalyUniv Roma Tor Vergata, Dipartimento Fis, Ist Nazl Fis Mat, I-00133 Rome, Italy
Perfetto, E
Cini, M
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Univ Roma Tor Vergata, Dipartimento Fis, Ist Nazl Fis Mat, I-00133 Rome, ItalyUniv Roma Tor Vergata, Dipartimento Fis, Ist Nazl Fis Mat, I-00133 Rome, Italy
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Univ Autonoma Madrid, Dept Fis Teor Mat Condensada C V, E-28049 Madrid, SpainUniv Autonoma Madrid, Dept Fis Teor Mat Condensada C V, E-28049 Madrid, Spain
Martin-Rodero, A.
Levy Yeyati, A.
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Univ Autonoma Madrid, Dept Fis Teor Mat Condensada C V, E-28049 Madrid, SpainUniv Autonoma Madrid, Dept Fis Teor Mat Condensada C V, E-28049 Madrid, Spain
Levy Yeyati, A.
Flores, F.
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Univ Autonoma Madrid, Dept Fis Teor Mat Condensada C V, E-28049 Madrid, SpainUniv Autonoma Madrid, Dept Fis Teor Mat Condensada C V, E-28049 Madrid, Spain
Flores, F.
Monreal, R. C.
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Univ Autonoma Madrid, Dept Fis Teor Mat Condensada C V, E-28049 Madrid, SpainUniv Autonoma Madrid, Dept Fis Teor Mat Condensada C V, E-28049 Madrid, Spain
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INFM - Dipartimento di Ingegneria Elettronica, Universitadi Roma Tor Vergata, 00133 RomaINFM - Dipartimento di Ingegneria Elettronica, Universitadi Roma Tor Vergata, 00133 Roma
Pecchia A.
Di Carlo A.
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INFM - Dipartimento di Ingegneria Elettronica, Universitadi Roma Tor Vergata, 00133 RomaINFM - Dipartimento di Ingegneria Elettronica, Universitadi Roma Tor Vergata, 00133 Roma
Di Carlo A.
Gagliardi A.
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Institute for Theoretical Physics, University of PaderbornINFM - Dipartimento di Ingegneria Elettronica, Universitadi Roma Tor Vergata, 00133 Roma
Gagliardi A.
Niehaus T.A.
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Institute for Theoretical Physics, University of PaderbornINFM - Dipartimento di Ingegneria Elettronica, Universitadi Roma Tor Vergata, 00133 Roma
Niehaus T.A.
Frauenheim T.
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Institute for Theoretical Physics, University of PaderbornINFM - Dipartimento di Ingegneria Elettronica, Universitadi Roma Tor Vergata, 00133 Roma