Design and characterization of electrically pumped vertical external cavity surface emitting lasers

被引：0
|
作者：
Orchard, J. R. [1 ]
Childs, D. T. D. [1 ]
Lin, L. C. [1 ]
Stevens, B. J. [1 ]
Williams, D. M. [1 ]
Hogg, R. A. [1 ]
机构：
[1] Univ Sheffield, Dept Elect & Elect Engn, Ctr Nanosci & Technol, Sheffield S3 7HQ, S Yorkshire, England
来源：
VERTICAL EXTERNAL CAVITY SURFACE EMITTING LASERS (VECSELS) | 2011年 / 7919卷
关键词：
Electrically pumped; VECSEL; Semiconductor disk laser; VCSEL; Power scaling; SERIES RESISTANCE; HIGH-POWER; DIODE; REDUCTION; REFLECTOR; OPERATION;
D O I：
10.1117/12.875126
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The design of electrically pumped vertical external cavity surface emitting lasers ( EP-VECSELs) for high power applications require a number of optimisations in design trade-offs, mainly that of doping for improved electrical performance and optical loss. Devices with diameter greater than 70 mu m and current spreading layer thickness of 100 mu m suffer from non-uniform carrier injection into the active region, below this diameter output power scales linearly with device area. We show CW powers of 133mW from a 150 mu m device with 4x10(17) cm(-3) substrate doping at 0 degrees C can be obtained.
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页数：9
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