Single-grain thin-film transistor using Ni-mediated crystallization of amorphous silicon with a silicon nitride cap layer

被引：31

作者：

Kim, JC ^{[1
]}

Choi, JH ^{[1
]}

Kim, SS ^{[1
]}

Kim, KM ^{[1
]}

Jang, J ^{[1
]}

机构：

[1] Kyung Hee Univ, Adv Display Res Ctr, Seoul 130701, South Korea

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 24期

关键词：

D O I：

10.1063/1.1633974

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Amorphous silicon was crystallized by metal-induced crystallization through a cap with a Ni area density of 2x10(14) atoms/cm(2) on the cap. The crystallized polycrystalline silicon (poly-Si) shows hexagonal-shaped or disk-shaped grains with average grain size of similar to40 mum. The p-type channel thin-film transistor (TFT) on a single-grain poly-Si exhibited a field-effect mobility of 114 cm(2)/V s, a threshold voltage of -4.7 V and a subthreshold slope of 0.5 V/dec. The gate bias-stressed changes in the TFT performance was found to be greatly reduced compared to the laser-annealed poly-Si TFT. The surface roughness of the poly-Si is 2.35 nm smaller than that of conventional excimer laser-annealed poly-Si (13.1 nm), which appears to be related to better device performance and improved stability. (C) 2003 American Institute of Physics.

引用

页码：5068 / 5070

页数：3

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