Formation mechanism and compensation methods of profile error in focused ion beam milling of three-dimensional optical microstructures

被引:9
|
作者
Chen, Xiao [1 ]
Ren, Zhenzhou [1 ]
Zhu, Yan [1 ]
Wang, Yixing [1 ]
Zhang, Jianguo [1 ]
Wang, Xuefang [1 ]
Xu, Jianfeng [1 ]
机构
[1] Huazhong Univ Sci & Technol, Sch Mech Sci & Engn, State Key Lab Digital Mfg Equipment & Technol, Wuhan 430074, Peoples R China
来源
SN APPLIED SCIENCES | 2020年 / 2卷 / 04期
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
Focused ion beam; Three-dimensional microstructures; Profile error; Formation mechanism; Error compensation; MICROLENS ARRAY; FABRICATION; MICROFABRICATION; LITHOGRAPHY;
D O I
10.1007/s42452-020-2456-2
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The formation mechanism and compensation methods of the profile error in focused ion beam (FIB) bitmap milling of three-dimensional (3D) optical microstructure are studied in this paper. The processing parameters such as ion beam currents, dwell times, and beam overlap ratios on the profile error have an optimized parameters combination of 21 nA, 10 mu s, and 50%, and the shape accuracy processed under the conditions is 0.44 mu m of P-V and 0.142 mu m of RMS, respectively. Inappropriate processing parameters lower either shape accuracy or processing efficiency. By means of an accurate simulation model of the FIB machined 3D profiles, the intrinsic formation mechanism of the profile error can be attributed to ion beam diameters, redeposition effect, and sputter yields, and these factors are inevitable in FIB milling of 3D microstructures. In situ modification and iterative optimization are proposed to compensate the FIB milling error, which both can improve the shape accuracy more than 50%. The in situ modification method needs to load the original bitmap and modified bitmap separately, which is less convenient than the iterative optimization method that only need loading one bitmap file. However, the in situ modification is better than the iterative optimization at decreasing the RMS value of the profile error which indicates the global profiles error of the processed microstructures.
引用
收藏
页数:16
相关论文
共 50 条
  • [31] Data preparation for focused ion beam machining of complex three-dimensional structures
    Lalev, G.
    Dimov, S.
    Kettle, J.
    van Delft, F.
    Minev, R.
    PROCEEDINGS OF THE INSTITUTION OF MECHANICAL ENGINEERS PART B-JOURNAL OF ENGINEERING MANUFACTURE, 2008, 222 (01) : 67 - 76
  • [32] Fabrication of complex three-dimensional nanostructures using focused ion beam and nanomanipulation
    Jeon, Jangbae
    Floresca, Herman Carlo
    Kim, M. J.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2010, 28 (03): : 549 - 553
  • [33] Development of focused ion beam machining systems for fabricating three-dimensional structures
    Kim, Sang-Jae
    Iwasaki, Koji
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (06) : 5120 - 5122
  • [34] Development of an ion and electron dual focused beam apparatus for three-dimensional microanalysis
    Sakamoto, T
    Cheng, ZH
    Takahashi, M
    Owari, M
    Nihei, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (4A): : 2051 - 2056
  • [35] Three-dimensional ion beam-profile monitor for storage rings
    Quinteros, T
    DeWitt, DR
    Paal, A
    Schuch, R
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1996, 378 (1-2): : 35 - 39
  • [36] Three-dimensional ion beam-profile monitor for storage rings
    Quinteros, T.
    DeWitt, D.R.
    Paal, A.
    Schuch, R.
    Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1996, 378 (1-2) : 35 - 39
  • [37] Three-Dimensional Modeling of Embedded Nanoparticles Formation by Ion Beam Implantation
    Li, Kun-Dar
    JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE, 2013, 10 (03) : 629 - 636
  • [38] Bulk focused ion beam fabrication with three-dimensional shape control of nanoelectromechanical systems
    Vick, D.
    Sauer, V.
    Fraser, A. E.
    Freeman, M. R.
    Hiebert, W. K.
    JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2010, 20 (10)
  • [39] Three-Dimensional Simulation of Focused Ion Beam Processing Using the Level Set Method
    Ertl, Otmar
    Filipovic, Lado
    Selberherr, Siegfried
    SISPAD 2010 - 15TH INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 2010, : 49 - 52
  • [40] Imaging three-dimensional tissue architectures by focused ion beam scanning electron microscopy
    Andrew J Bushby
    Kenneth M Y P'ng
    Robert D Young
    Christian Pinali
    Carlo Knupp
    Andrew J Quantock
    Nature Protocols, 2011, 6 : 845 - 858