Optical third-harmonic generation in reflection from (110) porous silicon layers

被引：0
|
作者：
Golovan, LA [1 ]
Kuznetsova, LP [1 ]
Konorov, SO [1 ]
Fedotov, AB [1 ]
Timoshenko, VY [1 ]
Zheltikov, AM [1 ]
Kashkarov, PK [1 ]
机构：
[1] Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119992, Russia
来源：
NONLINEAR OPTICS OF LIQUID AND PHOTOREFRACTIVE CRYSTALS | 2003年 / 5257卷
关键词：
third-harmonic generation; porous silicon; nanostructures;
D O I：
10.1117/12.545860
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We studied third-harmonic generation (THG) in reflection geometry from porous silicon layers grown on (110) silicon substrates. A significant (more than 10 times) enhancement of the THG efficiency compared to crystalline silicon was found for the samples prepared on highly doped substrate, whereas for the samples grown on low-doped substrate the THG was much less effective than for crystalline silicon. This fact is connected with fluctuations of the electric field of the pump laser irradiation in the layers of anisotropically distributed silicon nanocrystals having different shape and sizes.
引用
收藏
页码：193 / 197
页数：5
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