A New Modeling of Photovoltaic Power Generation

This paper presents a novel approach to complete the mathematical model for photovoltaic power generation. In this approach, the relation between the diode factor and temperature at p-n junction is added into the its mathematical model corresponding to each structure of this generation made from semiconductors. Using calculation results from the iterative and bisectional technique to determine maximum power point, the system of equations converting some parameters from standard test condition to any working condition, datasheet published by manufacturers, the mathematical model is tested to ensure that the diode factor only depend on temperature at p-n junction. Moreover, the least square method is used to create the function representing this relation from only some pair-values. Calculated results of the proposed modeling that applied in a MF165EB3 panel show the high accuracy about value of maximum power and good meaning in control when using results of iterative and bisectional technique at any working condition.