Nanoindentation analysis of mechanical properties of low to ultralow dielectric constant SiCOH films

Carbon-doped oxide SiCOH films with low to ultralow dielectric constants were prepared on a Si substrate by plasma-enhanced chemical vapor deposition (PECVD) from mixtures of SiCOH precursors with organic materials. The films have different levels of nanoscale porosity resulting in different dielectric constants and mechanical properties. The mechanical properties of the films have been characterized by continuous-stiffness nanoindentation measurements. To study the effect of film thickness, each group of samples with the same dielectric constant was composed of samples prepared with different film thicknesses. It is shown that the effective hardness and modulus of the SiCOH/Si substrate system depends significantly on indentation depth due to substrate constraint effects. The "true" film properties were determined using both an empirical formulation of the effective modulus and direct inversion based. on a finite element model. The hardness and modulus of three groups of samples with different degrees of dielectric constants have been measured. The hardness increases from 0.7 to 2.7 GPa and modulus from 3.6 to 17.0 GPa as the dielectric constants change from 2.4 to 3.0. While for stiffer films the modulus measured at an indentation depth 10% of the film thickness is close to the "true" value for films thicker than 0.5 mu m, the measured value can give an overestimate of up to 35% for softer films. Thin film cracking and film-substrate debonding have been observed with scanning electron and atomic force microscopy at the indentation sites in softer films. The damage initiation is indicated by pop-in events in the loading curve and sharp peaks in the normalized contact stiffness curves versus indentation depth.