Advanced technology for a new NPT-IGBT module design

被引：0

作者：

Miyashita, S ^{[1
]}

Yoshiwatari, S ^{[1
]}

Kobayashi, S ^{[1
]}

Sakurai, K ^{[1
]}

机构：

[1] Fuji Elect Co Ltd, Matsumoto Factory, Matsumoto, Nagano 390, Japan

来源：

CONFERENCE RECORD OF THE 1998 IEEE INDUSTRY APPLICATIONS CONFERENCE, VOLS 1-3 | 1998年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper introduces the technologies for a newly developed 1200V/600A 1in1 NPT-IGBT module which is shown in Figure 1. This IGBT has low power dissipation loss, low noise, soft switching and higher reliability. These features have been realized by advanced simulation and stress analysis for 3D-structures.

引用

页码：1061 / 1066

页数：6

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