Fingered morphology of niobium (110) grown by molecular-beam epitaxy

被引:16
|
作者
Zhou, GL [1 ]
Flynn, CP [1 ]
机构
[1] Univ Illinois, Mat Res Lab, Urbana, IL 61801 USA
关键词
D O I
10.1103/PhysRevB.59.7860
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report a regime of temperature film thickness and substrate miscut in which thin films of niobium (110) grow faceted on sapphire (11 (2) over bar 0), and with a surface morphology that contains long fingers oriented along the niobium in-plane [001] direction. The origins of these features are discussed. [S0163-1829(99)06011-7].
引用
收藏
页码:7860 / 7867
页数:8
相关论文
共 50 条
  • [21] CHARACTERIZATION OF GAAS FILMS GROWN ON VICINAL SI(110) SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    YODO, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (9A): : 4631 - 4640
  • [22] SURFACE-MORPHOLOGY AND QUALITY OF STRAINED INGAAS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS
    YOON, SF
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03): : 562 - 566
  • [23] SURFACE-MORPHOLOGY OF GAAS-(100) LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    DVORYANKINA, GG
    DVORYANKIN, VF
    POROTIKOV, AP
    VARAKSIN, GA
    PETROV, AG
    INORGANIC MATERIALS, 1985, 21 (02) : 148 - 150
  • [24] THE STRAIN RELAXATION OF IN0.1GA0.9AS ON GAAS(110) GROWN BY MOLECULAR-BEAM EPITAXY
    ZHANG, X
    PASHLEY, DW
    NEAVE, JH
    HART, L
    JOYCE, BA
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (11) : 6454 - 6457
  • [25] BAND OFFSETS AND INTERFACIAL PROPERTIES OF CUBIC CDS GROWN BY MOLECULAR-BEAM EPITAXY ON CDTE(110)
    NILES, DW
    HOCHST, H
    PHYSICAL REVIEW B, 1990, 41 (18): : 12710 - 12719
  • [26] GALNP GROWN BY MOLECULAR-BEAM EPITAXY DOPED WITH BE AND SN
    BLOOD, P
    ROBERTS, JS
    STAGG, JP
    JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 3145 - 3149
  • [27] ALGAAS DOPING SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY
    ACKLEY, DE
    LEE, H
    NOURI, N
    COLVARD, C
    APPLIED PHYSICS LETTERS, 1988, 52 (22) : 1883 - 1885
  • [28] Properties of silicon nanowhiskers grown by molecular-beam epitaxy
    Naumova, Olga V.
    Nastaushev, Yuri V.
    Svitasheva, Svetlana N.
    Sokolov, Leonid V.
    Werner, Peter
    Zakharov, Nikolay D.
    Gavrilova, Tatyana A.
    Dultsev, Fedor N.
    Aseev, Alexander L.
    PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2007, 893 : 739 - +
  • [29] ALGASB/GASB DIODES GROWN BY MOLECULAR-BEAM EPITAXY
    LONGENBACH, KF
    WANG, WI
    APPLIED PHYSICS LETTERS, 1991, 59 (09) : 1117 - 1119
  • [30] HGTE/CDTE SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY
    FAURIE, JP
    BOUKERCHE, M
    SIVANANTHAN, S
    RENO, J
    HSU, C
    SUPERLATTICES AND MICROSTRUCTURES, 1985, 1 (03) : 237 - 244