Characterization of oxygen related defects in silicon p-n junctions

被引：0

作者：

Tejada, JAJ ^{[1
]}

Villanueva, JAU ^{[1
]}

Godoy, A ^{[1
]}

Gómez-Campos, FM ^{[1
]}

Rodríguez-Bolívar, S ^{[1
]}

Carceller, JE ^{[1
]}

机构：

[1] Univ Granada, Fac Ciencias, Dept Elect & Tecnol Comp, E-18071 Granada, Spain

来源：

2005 Spanish Conference on Electron Devices, Proceedings | 2005年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

One of the levels that is frequently detected in Czochralski-grown silicon (Cz-Si) by different authors is analyzed in a p-n(+) junction at low and room temperatures for different bias conditions. We examine the results from different experimental techniques, usually employed to extract parameters in p-n junctions, to acquire a better understanding of the electrical activity of oxygen in Cz-Si. The reason of studying these results is because different electrical conditions during the characterization of identical samples can lead to contradictory conclusions. In order to link these disparate results we show how one of the oxygen related defects can act as a hole trap or as an electron trap at different temperatures.

引用

页码：37 / 40

页数：4

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