Dopant-Assisted Tunnel-Current Enhancement in Two-Dimensional Esaki Diodes

被引：0
|
作者：
Tan, H. N. [1 ]
Moraru, D. [2 ]
Tyszka, K. [1 ,3 ]
Sapteka, A. [4 ]
Purwiyanti, S. [4 ]
Anh, L. T. [5 ]
Manoharan, M. [5 ]
Mizuno, T. [1 ]
Jablonski, R. [3 ]
Hartanto, D. [4 ]
Mizuta, H. [5 ,6 ]
Tabe, M. [1 ]
机构：
[1] Shizuoka Univ, Res Inst Elect, Shizuoka 4228529, Japan
[2] Shizuoka Univ, Fac Engn, Shizuoka 4228529, Japan
[3] Warsaw Univ Technol, Inst Metrol & Biomed Engn, PL-00661 Warsaw, Poland
[4] Univ Indonesia, Dept Elect Engn, Depok, Indonesia
[5] Japan Adv Inst Sci & Technol, Sch Mat Sci, Nomi, Ishikawa, Japan
[6] Univ Southampton, Fac Phys & Appl Sci, Nano Grp, Southampton SO9 5NH, Hants, England
来源：
2015 SILICON NANOELECTRONICS WORKSHOP (SNW) | 2015年
关键词：
JUNCTIONS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We study ultrathin (2D) lateral Si Esaki tunneling diodes, and find that anomalous current peaks and humps are observed to be superimposed on the ordinary negative differential conductance (NDC). The remarkable enhancement of interband tunneling current is primarily ascribed to resonant tunneling via gap-states created by large potential fluctuation due to prominent inhomogeneity of dopant distribution (dopant-clusters) in the 2D depletion region.
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页数：2
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