Scanning tunneling microscopy of single dye molecules on GaAs(110) surfaces

被引:5
|
作者
Nevo, I [1 ]
Cohen, SR [1 ]
机构
[1] Weizmann Inst Sci, IL-76100 Rehovot, Israel
基金
以色列科学基金会;
关键词
scanning tunneling microscopy; surface photovoltage; surface electronic phenomena; electrical transport measurements; single crystal surfaces; gallium arsenide; aromatics;
D O I
10.1016/j.susc.2005.03.045
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Scanning tunneling microscopy and surface photovoltage images are reported for isolated dye molecules on the GaAs(1 1 0) surface. Profound differences in the molecular images are observed for different experimental conditions. Specifically, contrast variations with changing bias polarity and magnitude, and for different substrate doping type are examined. Several mechanisms are considered to describe the observations including direct and resonant tunneling, and switching of charges between molecular states in the band gap and the energy bands of the GaAs. This treatment enables both assignment of the molecular charge state polarity, and clarification of the mechanism for current flow. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:297 / 309
页数:13
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