Oxide-based RRAM: Requirements and Challenges of Modeling and Simulation

被引：0

作者：

Kang, J. F. ^{[1
]}

Gao, B. ^{[1
]}

Huang, P. ^{[1
]}

Li, H. T. ^{[1
]}

Zhao, Y. D. ^{[1
]}

Chen, Z. ^{[1
]}

Liu, C. ^{[1
]}

Liu, L. F. ^{[1
]}

Liu, X. Y. ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

来源：

2015 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2015年

关键词：

MEMORY;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

New physical insights on the underlying physics from switching behaviors to operating mechanisms of oxide-based RRAM are presented by taking the microstructure nature of switching materials and correlated physical effects with switching process into account. Based on the new physical insights, a platform for HfOx- and TaOx-based RRAM including simulation tools and compact models is developed, which is able to reproduce the essential electrical and microscopic characteristics of RRAM and bridge the link between device and circuit systems, meeting the requirements of device-circuit-system co-design and optimization.

引用

页数：4

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