Electronic structure and vibrational spectra of X20H20 (X = C, Si, Ge, Sn):: A theoretical study

被引:4
|
作者
Ramachandran, G [1 ]
Manogaran, S [1 ]
机构
[1] Indian Inst Technol, Dept Chem, Kanpur 208016, Uttar Pradesh, India
来源
JOURNAL OF MOLECULAR STRUCTURE-THEOCHEM | 2005年 / 730卷 / 1-3期
关键词
C20H20; Si20H20; Ge20H20; Sn20H20; geometry; vibrational spectra;
D O I
10.1016/j.theochem.2005.04.006
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Optimized geometries, HOMO-LUMO gaps, vertical ionization potentials and electron affinities are obtained using HF, and B3LYP methods with 6-31 1G** basis set for C20H20, Si20H20 and Ge20H20. For germanium and tin analogues, B3LYP calculations are performed with LANL2DZ effective core potential. Electron correlation is included by doing MP2 calculation. The harmonic frequencies of all the compounds are obtained using B3LYP with 6-31 1G** and/or LANL2DZ basis sets. The force field and vibrational spectra are analyzed and 74 symmetry unique non-redundant local force constants are evaluated. Probable assignments are proposed for all the fundamentals based on the potential energy distribution. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:171 / 176
页数:6
相关论文
共 50 条
  • [1] Vibrational spectra of adarnantanes X10H16 and diamantanes X14H20 (X = C, Si, Ge, Sn):: A theoretical study
    Ramachandran, Gnanasekaran
    Manogaran, Sadasivam
    JOURNAL OF MOLECULAR STRUCTURE-THEOCHEM, 2006, 766 (2-3): : 125 - 135
  • [2] Probing the effects of gold doping on structural, electronic and nonlinear optical properties of caged X20H20 (X=Si, Ge, Sn, Pb) clusters
    Zhang, Yunfeng
    Li, Xiaojun
    Lu, Jun
    EUROPEAN JOURNAL OF INORGANIC CHEMISTRY, 2024, 27 (09)
  • [3] The Effect of Silicon on the Electronic Structure and Corrosion–Electrochemical Behavior of Boron-Containing X20H20 Steels
    O. V. Kasparova
    Yu. V. Baldokhin
    A. S. Solomatin
    N. I. Khokhlov
    Protection of Metals, 2003, 39 : 429 - 434
  • [4] The effect of silicon on the electronic structure and corrosion - Electrochemical behavior of boron-containing X20H20 steels
    Kasparova, OV
    Baldokhin, YV
    Solomatin, AS
    Khokhlov, NI
    PROTECTION OF METALS, 2003, 39 (05): : 429 - 434
  • [5] Vibrational spectra of triamantane X18H24, iso-tetramantane X22H28 and cyclohexamantane X26H30 (X = C, Si, Ge, Sn) -: A theoretical study
    Ramachandran, Gnanasekaran
    Manogaran, Sadasivam
    JOURNAL OF MOLECULAR STRUCTURE-THEOCHEM, 2007, 816 (1-3): : 31 - 41
  • [6] VIBRATIONAL-SPECTRA AND STRUCTURE (S) OF SOME X(SR)4 MOLECULES WITH X=C, SI, GE, SN AND R= METHYL, ETHYL, ISOPROPYL
    YPENBURG, JW
    GERDING, H
    RECUEIL DES TRAVAUX CHIMIQUES DES PAYS-BAS, 1972, 91 (9-10): : 1117 - &
  • [7] Electronic and structural properties of Ti9XO20 (X=Ti, C, Si, Ge, Sn and pb) clusters: A DFT study
    Salazar-Villanueva, M.
    Bautista Hernandez, A.
    Chigo Anota, E.
    Valdez, S.
    Vazquez Cuchillo, O.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2015, 65 : 120 - 124
  • [8] Theoretical prediction of the structural and electronic properties of pseudocubic X3As4 (X = C, Si, Ge and Sn) compounds
    Charifi, Z.
    Baaziz, H.
    Hamad, B.
    PHYSICA B-CONDENSED MATTER, 2009, 404 (12-13) : 1632 - 1637
  • [9] Atomic structure and electronic properties of hydrogenated X (=C, Si, Ge, and Sn) doped TiO2: A theoretical perspective
    Filippatos, Petros-Panagis
    Kelaidis, Nikolaos
    Vasilopoulou, Maria
    Davazoglou, Dimitris
    Chroneos, Alexander
    AIP ADVANCES, 2020, 10 (11)
  • [10] π-Bond strengths of H2X = YH. X = Ge or Sn, and Y = C, Si, Ge, or Sn
    Windus, Theresa I.
    Gordon, Mark S.
    Journal of the American Chemical Society, 1992, 114 (24)