Probing the effects of gold doping on structural, electronic and nonlinear optical properties of caged X20H20 (X=Si, Ge, Sn, Pb) clusters

被引:0
|
作者
Zhang, Yunfeng [1 ]
Li, Xiaojun [1 ]
Lu, Jun [2 ]
机构
[1] Xian Univ Posts & Telecommun, Sch Sci, Xian 710121, Peoples R China
[2] Inner Mongolia Univ Sci & Technol, Sch Life Sci & Technol, Baotou 014010, Peoples R China
关键词
density-functional theory; endohedral cluster; electronic properties; nonlinear optical properties; chemical stability; EFFECTIVE CORE POTENTIALS; MOLECULAR CALCULATIONS; SILICON CLUSTERS; TIN CLUSTERS; GERMANIUM; PHOTOIONIZATION; GRAPHDIYNE; STABILITY; ATOMS; SC;
D O I
10.1002/ejic.202300667
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
Carbon family elements (Si, Ge, Sn, Pb) have attracted a lot of attention because of their unique structural features and potential applications in microelectronics industry. Here, the structure, chemical stability, electronic properties, and nonlinear optical properties of neutral and charged Au@X20H20 (X= Si, Ge, Sn, Pb) clusters have been systematically studied using densityfunctional theory calculations. Structurally, the neutral/anionic Au@X20H20 (X= Si, Ge, Sn) as well as cationic Au@Pb20H20 possess Au-endohedral (XH) 20 unit, forming fullerene-like framework, whereas other species are Au-doped structures with hydrogen-bridged bond. Analysis of binding energy and HOMO-LUMO energy gaps reveals that the charged clusters possess high chemical stabilities due to closed-shell structures. The charge transfers from X-20 cage to Au atom, and the Au atom acts as electron acceptor. The Au atom and charged states play an important role in the structural stability, and can effectively modulate the electronic properties of clusters. Interestingly, the neutral Au@X20H20 (X= Si, Sn) clusters possess large first hyperpolarizabilities, especially for Au@Sn20H20, which has remarkably giant value (similar to 5.65x10(8) a. u.), and the enhanced NLO behaviors can be further explained by the TDDFT calculation. The work may provide a theoretical reference for further applications considered as novel cluster-assembled nanomaterials.
引用
收藏
页数:12
相关论文
共 50 条
  • [1] Electronic structure and vibrational spectra of X20H20 (X = C, Si, Ge, Sn):: A theoretical study
    Ramachandran, G
    Manogaran, S
    JOURNAL OF MOLECULAR STRUCTURE-THEOCHEM, 2005, 730 (1-3): : 171 - 176
  • [2] Structural and electronic properties of Al12X+ (X=C, Si, Ge, Sn, and Pb) clusters
    Chen, G.
    Kawazoe, Y.
    JOURNAL OF CHEMICAL PHYSICS, 2007, 126 (01):
  • [3] Electronic and structural properties of Ti9XO20 (X=Ti, C, Si, Ge, Sn and pb) clusters: A DFT study
    Salazar-Villanueva, M.
    Bautista Hernandez, A.
    Chigo Anota, E.
    Valdez, S.
    Vazquez Cuchillo, O.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2015, 65 : 120 - 124
  • [4] Structural and electronic properties of neutral clusters Ga12X (X=C, Si, Ge, Sn, and Pb) and their anions from first principles
    Yuan, Guifang
    Lu, Pengfei
    Han, Lihong
    Yu, Zhongyuan
    Shen, Yue
    Zhao, Long
    Liu, Yumin
    PHYSICA B-CONDENSED MATTER, 2011, 406 (18) : 3498 - 3501
  • [5] XB2Bi2 (X = Si, Ge, Sn, Pb): Penta-Atomic Planar Tetracoordinate Si/Ge/Sn/Pb Clusters with 20 Valence Electrons
    Jin, Yan-Xia
    Guo, Jin-Chang
    INTERNATIONAL JOURNAL OF MOLECULAR SCIENCES, 2024, 25 (05)
  • [6] Structural, electronic and optical properties of Be2X(X = C, Si, Ge, Sn): First principle study
    Gupta, Prakash Chanda
    Adhikari, Rajendra
    COMPUTATIONAL CONDENSED MATTER, 2022, 31
  • [7] First-principles calculations of structural, electronic and optical properties of BaGaXH (X=Si, Ge, Sn)
    Chihi, T.
    Ghebouli, M. A.
    Ghebouli, B.
    Bouhemadou, A.
    Fatmi, M.
    Bin-Omran, S.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2013, 16 (06) : 1558 - 1565
  • [8] Structural and electronic properties of neutral clusters In12X (X = C, Si, Ge, and Sn) and their anions from first principles
    Liu, Yuzhen
    Deng, Kaiming
    Yuan, Yongbo
    Chen, Xuan
    Wu, Haiping
    Wang, Xin
    CHEMICAL PHYSICS LETTERS, 2009, 469 (4-6) : 321 - 324
  • [9] Structural, electronic, and magnetic properties of CrMnX (X = Ge, Se, Si, and Sn) compounds
    Ahmed, Shabbir
    Shakil, M.
    Zafar, Muhammad
    Choudhary, M. A.
    Iqbal, T.
    CANADIAN JOURNAL OF PHYSICS, 2020, 98 (03) : 291 - 296
  • [10] First-principles calculations of structural, mechanical and electronic properties of TiNi-X (X = C, Si, Ge, Sn, Pb) alloys
    Hong, Dan
    Zeng, Wei
    Xin, Zhao
    Liu, Fu-Sheng
    Tang, Bin
    Liu, Qi-Jun
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2019, 33 (16):