Nonvolatile Memory Effect in Indium Gallium Arsenide-Based Metal-Oxide-Semiconductor Devices Using II-VI Tunnel Insulators

被引：7

作者：

Chan, P. -Y. ^{[1
]}

Gogna, M. ^{[1
]}

Suarez, E. ^{[1
]}

Karmakar, S. ^{[1
]}

Al-Amoody, F. ^{[1
]}

Miller, B. I. ^{[1
]}

Jain, F. C. ^{[1
]}

机构：

[1] Univ Connecticut, Dept Elect & Comp Engn, Storrs, CT 06269 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2011年 / 40卷 / 08期

关键词：

InGaAs MOS devices; high-kappa; ZnSe/ZnS/ZnMgS tunnel insulator; II-VI insulators; nonvolatile memory; quantum dot;

D O I：

10.1007/s11664-011-1655-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports the successful use of ZnSe/ZnS/ZnMgS/ZnS/ZnSe as a gate insulator stack for an InGaAs-based metal-oxide-semiconductor (MOS) device, and demonstrates the threshold voltage shift required in nonvolatile memory devices using a floating gate quantum dot layer. An InGaAs-based nonvolatile memory MOS device was fabricated using a high-kappa II-VI tunnel insulator stack and self-assembled GeO (x) -cladded Ge quantum dots as the charge storage units. A Si3N4 layer was used as the control gate insulator. Capacitance-voltage data showed that, after applying a positive voltage to the gate of a MOS device, charges were being stored in the quantum dots. This was shown by the shift in the flat-band/threshold voltage, simulating the write process of a nonvolatile memory device.

引用

页码：1685 / 1688

页数：4

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