Spin-Torque Diode Measurements of MgO-Based Magnetic Tunnel Junctions with Asymmetric Electrodes

被引：22
|
作者：
Matsumoto, Rie [1 ]
Chanthbouala, Andre [1 ]
Grollier, Julie [1 ]
Cros, Vincent [1 ]
Fert, Albert [1 ]
Nishimura, Kazumasa [2 ]
Nagamine, Yoshinori [2 ]
Maehara, Hiroki [2 ]
Tsunekawa, Koji [2 ]
Fukushima, Akio [3 ]
Yuasa, Shinji [3 ]
机构：
[1] UMR CNRS Thales, F-91767 Palaiseau, France
[2] Canon ANELVA Corp, Proc Dev Ctr, Kawasaki, Kanagawa 2158550, Japan
[3] Natl Inst Adv Ind Sci & Technol, Spintron Res Ctr, Tsukuba, Ibaraki 3058568, Japan
来源：
APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 06期
基金：
欧洲研究理事会;
关键词：
VOLTAGE-DEPENDENCE; ROOM-TEMPERATURE; MAGNETORESISTANCE;
D O I：
10.1143/APEX.4.063001
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present a detailed study of the spin-torque diode effect in CoFeB/MgO/CoFe/NiFe magnetic tunnel junctions. From the evolution of the resonance frequency with magnetic field at different angles, we clearly identify the free-layer mode and find an excellent agreement with simulations by taking into account several terms for magnetic anisotropy. Moreover, we demonstrate the large contribution of the out-of-plane torque in our junctions with asymmetric electrodes compared to the in-plane torque. Consequently, we provide a way to enhance the sensitivity of these devices for the detection of microwave frequency. (C) 2011 The Japan Society of Applied Physics
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页数：3
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