Positive magnetoconductivity and inelastic scattering time at low temperatures with magnetic field in InSb semiconductor

被引：2
|
作者：
El Oujdi, A. [1 ]
Ennajih, D. [1 ]
El Kaaouachi, A. [2 ]
Mounir, E. [1 ]
Echchelh, A. [1 ]
Dlimi, S. [3 ]
机构：
[1] Fac Sci Ibn Tofail, Lab Energet Engn & Mat, Kenitra, Morocco
[2] MPAC Team, Fac Sci Agadir, BP 8104, Agadir 80000, Morocco
[3] Fac Sci Agadir, Dept Phys, Agadir, Morocco
来源：
MOLECULAR CRYSTALS AND LIQUID CRYSTALS | 2022年 / 737卷 / 01期
关键词：
InSb; inelastic scattering time; low temperatures; magnetic field; metal insulator transition; positive magnetoconductivity; METAL-INSULATOR-TRANSITION; WEAK-LOCALIZATION; SCALING THEORY; P-GAAS; MAGNETORESISTANCE; CONDUCTIVITY; BEHAVIOR;
D O I：
10.1080/15421406.2021.2014675
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
In this work, we investigate the temperature dependence of the perpendicular electrical conductivity in presence of magnetic field of InSb sample measurements obtained by Abboudy [16]. First we determine the value of the critical magnetic field B-C for which the metal insulator transition (MIT) occurs. On the metallic side of the MIT, we are interested in the study of positive magnetoconductivity as a function of magnetic field by modeling it with complex theoretical models. The validity of these models is tested by calculating and comparing the inelastic scattering time tau(epsilon) for each model used.
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页码：123 / 131
页数：9
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