A 100-mW 4 x 10 Gb/s transceiver in 80-nm CMOS for high-density optical interconnects

被引:80
|
作者
Kromer, C [1 ]
Sialm, G
Berger, C
Morf, T
Schmatz, ML
Ellinger, F
Erni, D
Bona, GL
Jäckel, H
机构
[1] ETH, Swiss Fed Inst Technol, Elect Lab, CH-8092 Zurich, Switzerland
[2] IBM Corp, Zurich Res Lab, CH-8803 Ruschlikon, Switzerland
[3] ETH, Swiss Fed Inst Technol, Lab Electromagnet Fields & Microwave Elect, CH-8092 Zurich, Switzerland
关键词
backplane transceiver; CMOS analog integrated circuits; high-frequency CMOS circuits; high-speed link; optical fiber communication; optical interconnections; transceiver;
D O I
10.1109/JSSC.2005.856575
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes a quad optical transceiver for low-power high-density short-distance optical data communication. Each channel transmits 10 Gb/s over a multimode (MM) fiber and features a link margin of 5.2 dB at a bit error rate (BER) of 10(-12). The transmit and receive amplifying circuits are implemented in an 80-nm digital CMOS process. Each driver consumes 2 mW from a 0.8-V supply, and each vertical cavity surface-emitting laser (VCSEL) requires 7 mA from a 2.4-V supply. The receiver excluding the output buffer consumes 6 mW from a 1.1-V supply per channel and achieves a transimpedance gain of 80.1 dB Omega. The isolation to the neighboring channels is >30 dB including the bond wires and optical components. A detailed link budget analysis takes the relevant system impairments as losses and power penalties into account, derives the specifications for the electrical circuits, and accurately predicts the link performance. This work presents the highest serial data rate for CMOS transceiver arrays and the lowest power consumption per data rate reported to date.
引用
收藏
页码:2667 / 2679
页数:13
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