Properties of ZnO thin films grown on Si substrates by Photo-assisted MOCVD

被引：37
|
作者：
Li, Xiangping [1 ]
Zhang, Baolin [1 ]
Zhu, Huichao [1 ]
Dong, Xin [2 ]
Xia, Xiaochuan [1 ]
Cui, Yongguo [2 ]
Huang, Keke [2 ,3 ]
Du, Guotong [1 ,2 ]
机构：
[1] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optelect, Changchun 130023, Peoples R China
[2] Dalian Univ Technol, State Key Lab Mat Modificat Laser, Ion & Elect Beams & Dept Phys, Dalian 116024, Peoples R China
[3] Jilin Univ, State Key Lab Inorgan Synt & Preparat Chem, Changchun 130012, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2008年 / 254卷 / 07期
基金：
中国国家自然科学基金;
关键词：
ZnO films; photo-assisted MOCVD; XRD spectra; photoluminescence; AFM;
D O I：
10.1016/j.apsusc.2007.08.056
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
ZnO thin films were grown on (1 0 0) p-Si substrates by Photo-assisted Metal Organic Chemical Vapor Deposition (PA-MOCVD) using diethylzinc (DEZn) and O-2 as source materials and tungsten-halogen lamp as a light source. The effects of tungsten-halogen lamp irradiation on the surface morphology, structural and optical properties of the deposited ZnO films have been investigated by means of atomic force microscope (AFM), X-ray diffraction and photoluminescence (PL) spectra measurements. Compared with the samples without irradiation, the several characteristics of ZnO films with irradiation are improved, including an improvement in the crystallinity of c-axis orientation, an increase in the grain size and an improvement in optical quality of ZnO films. These results indicated that light irradiation played an important role in the growth of ZnO films by PA-MOCVD. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：2081 / 2084
页数：4
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