Fermi-level effect on the interdiffusion of InAs and InGaAs quantum dots

被引：21
|
作者：
Shchekin, OB [1 ]
Deppe, DG [1 ]
Lu, D [1 ]
机构：
[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA
来源：
APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 20期
关键词：
D O I：
10.1063/1.1372362
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Data are presented on the Fermi level influence on interdiffusion in self-organized quantum dots. Modulation doping is used to place either electrons or holes in the quantum dots' zero-dimensional levels. The ground state emission energy and discrete level energy separations show that p-type modulation doping enhances the interdiffusion of the quantum dot material with its surrounding barriers, while n-type doping inhibits the interdiffusion. The results are consistent with the interdiffusion proceeding through interstitial crystal defects. (C) 2001 American Institute of Physics.
引用
收藏
页码：3115 / 3117
页数：3
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