Blue shift and mirror degradation in InGaAs/GaAs strained quantum well lasers

被引：1

作者：

Serra, L

Azzini, GA

Montangero, P

机构：

[1] CSELT Centro Studi e Laboratori, Telecomunicazioni S.p.A., 10148 Torino, Via G. Reiss Romoli

来源：

MICROELECTRONICS AND RELIABILITY | 1996年 / 36卷 / 7-8期

关键词：

D O I：

10.1016/0026-2714(96)00032-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InGaAs/GaAs strained quantum well gain guided lasers failed during aging tests. A front facet damage with formation of a dark defect close to the mirror has been evidenced with infrared and scanning optical microscopy. The defects are responsible for large losses into the cavity, which cause an higher density of injected carriers to sustain lasing and a blue shift of about 40 nm in the optical spectrum. Copyright (C) 1996 Elsevier Science Ltd.

引用

页码：1095 / 1105

页数：11

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