High-Voltage 4H-SiC Thyristors With a Graded Etched Junction Termination Extension

被引：39

作者：

Paques, Gontran ^{[1
,2
]}

Scharnholz, Sigo ^{[1
]}

Dheilly, Nicolas ^{[3
]}

Planson, Dominique ^{[3
]}

De Doncker, Rik W. ^{[2
]}

机构：

[1] French German Res Inst St Louis, F-68300 St Louis, France

[2] Rhein Westfal Tech Hsch Aachen Univ, Power Generat & Storage Syst Energy Res Ctr, D-52062 Aachen, Germany

[3] Univ Lyon, Inst Natl Sci Appl Lyon, Ampere Lab, F-69621 Villeurbanne, France

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 10期

关键词：

Gate turn-off (GTO); ion implantation; reactive ion etching; silicon carbide (SiC); termination; thyristor; KV;

D O I：

10.1109/LED.2011.2163055

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time, a graded etched junction termination extension (JTE) is applied to completed 4H-SiC gate turn-off thyristors. These devices demonstrate the feasibility of nonimplanted high-voltage SiC thyristors. The maximal measured forward breakdown voltage of 7.8 kV corresponds very well to the ideal value of 8.1 kV. This letter explains the conceptual procedure to realize an optimal four-step JTE and compares measurement results with those obtained from finite-element simulations.

引用

页码：1421 / 1423

页数：3

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