60Co gamma radiation effects on DC, RF, and pulsed I-V characteristics of AlGaN/GaN HEMTs

被引：78
|
作者：
Aktas, O
Kuliev, A
Kumar, V
Schwindt, R
Toshkov, S
Costescu, D
Stubbins, J
Adesida, I [1 ]
机构：
[1] Univ Illinois, Dept Elect & Comp Engn, Micro & Nanotechnol Lab, Urbana, IL 61801 USA
[2] Univ Illinois, Dept Nucl Plasma & Radiol Engn, Urbana, IL 61801 USA
来源：
SOLID-STATE ELECTRONICS | 2004年 / 48卷 / 03期
关键词：
D O I：
10.1016/j.sse.2003.08.003
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Total-dose gamma radiation effects on static, high-frequency, and pulsed current-voltage characteristics of silicon nitride passivated AlGaN/GaN HEMTs were investigated. Passivated AlGaN/GaN HEMTs were exposed to a maximum total dose of 600 Mrad using a Co-60 source under nitrogen ambient. The magnitude of the changes in the DC characteristics exhibited a monotonic increase with increasing radiation dose. At 600 Mrad dose, -0.1 V shift in threshold voltage and 3% increase in maximum transconductance was observed. High-frequency small-signal characteristics did not exhibit a significant change. Pulsed current levels increased in relation to the shift in threshold voltage, indicating no radiation damage related degradation in large signal transient behavior. The mobility, sheet carrier density, contact resistance, and sheet resistance of the sample did not exhibit measurable changes. The limited response of the devices to the high radiation dose indicates that the AlGaN/GaN HEMTs can have very high radiation hardness. The observed effects are consistent with radiation-induced trap creation. (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码：471 / 475
页数：5
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