Snake States along Graphene p-n Junctions

被引:75
|
作者
Williams, J. R. [1 ]
Marcus, C. M. [2 ]
机构
[1] Harvard Univ, Sch Engn & Appl Sci, Cambridge, MA 02138 USA
[2] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA
关键词
2-DIMENSIONAL ELECTRON-GAS; POINT; FIELD;
D O I
10.1103/PhysRevLett.107.046602
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We investigate transport in locally gated graphene devices, where carriers are injected and collected along, rather than across, the gate edge. Tuning densities into the p-n regime significantly reduces resistance along the p-n interface, while resistance across the interface increases. This provides an experimental signature of snake states, which zigzag along the p-n interface and remain stable as applied perpendicular magnetic field approaches zero. Snake states appear as a peak in transverse resistance measured along the p-n interface. The generic role of snake states in disordered graphene is also discussed.
引用
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页数:4
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