Increased Deep-Level Hole Trapping by Combined Negative-Bias Temperature and Channel Hot-Hole Stress

被引：2

作者：

Ho, T. J. J. ^{[1
]}

Ang, D. S. ^{[1
]}

Leong, K. C. ^{[2
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] GLOBALFOUNDRIES Singapore Pte Ltd, Singapore 738406, Singapore

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 10期

关键词：

Bias-temperature instability; hot-carrier effect; MOSFET; oxynitride gate dielectric; DEGRADATION;

D O I：

10.1109/LED.2011.2162482

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Trapping of holes at deep energy states under negative-bias-temperature instability (NBTI) is examined in the presence of a nonzero drain bias [i.e., channel hot-hole (CHH) effect]. While the total density of switching hole traps is unchanged after the combined NBTI and CHH stress (implying no additional creation of such traps for the conditions studied), evidence shows that the density of deep-level switching hole traps is increased. Enhanced carrier-lattice interaction under hot-hole injection is believed to induce the greater structural relaxation inherent to specific precursor sites for these deep-level hole traps. Implications of this observation are briefly discussed.

引用

页码：1337 / 1339

页数：3

共 28 条

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Ang, D. S.
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IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2008, 8 (01) : 22 - 34
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[10] Comparison of hot-hole injections in ultrashort channel LDD nMOSFETs with ultrathin oxide under an alternating stress
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