InAlAs/InGaAs HBT with superlattice confinement emitter

被引：0

作者：

Lour, WS ^{[1
]}

Hsieh, JL ^{[1
]}

Lia, CY ^{[1
]}

Wu, MY ^{[1
]}

Huang, GL ^{[1
]}

机构：

[1] Natl Taiwan Ocean Univ, Dept Elect Engn, Keelung, Taiwan

来源：

PROCEEDINGS OF THE SYMPOSIUM ON LIGHT EMITTING DEVICES FOR OPTOELECTRONIC APPLICATIONS AND THE TWENTY-EIGHTH STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS | 1998年 / 98卷 / 02期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A 20-period InAlAs/InGaAs superlattice layer was used a hole confinement layer of a heterojunction bipolar transistor (HBT). The SL-HBT exhibits a much smaller offset voltage and a similar current gain when compared to a conventional HBT with a bulk-InAlAs confinement layer. The measured offset voltage and de current gain are 75 (300) mV and 26 (21) in average for a large-area SL-HBT (HEBT). Furthermore, the SL-HBT shows an area-independent current gain. Transistors with emitter dimensions of 150x150, 46x46, 20x20, and 10x10 mu m(2) exhibit current gains in the range of 26 +/- 3. Experimental results reveal that lateral scaling of SL-HBT's is still effective, just like abrupt emitter InAlAs/InGaAs HBT's.

引用

页码：555 / 563

页数：9

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