Design and fabrication of ultrathin and highly thermal-stable α-Ta/graded Ta(N)/TaN multilayer as diffusion barrier for Cu interconnects

被引：5

作者：

Liu, C. H. ^{[1
]}

Wang, Y. ^{[1
]}

Liu, B. ^{[1
]}

An, Z. ^{[1
]}

Song, Z. X. ^{[2
]}

Xu, K. W. ^{[2
]}

机构：

[1] Sichuan Univ, Inst Nucl Sci & Technol, Minist Educ, Key Lab Radiat Phys & Technol, Chengdu 610064, Peoples R China

[2] Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2011年 / 44卷 / 07期

基金：

中国国家自然科学基金;

关键词：

TANTALUM FILMS; THIN-FILMS; STABILITY; LAYER; TA; MODEL; BETA;

D O I：

10.1088/0022-3727/44/7/075302

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A one-step strategy of magnetron sputtering deposition with dynamic regulation of sputtering atmosphere was developed to prepare alpha-Ta/graded Ta(N)/TaN multilayer films on the Si substrate. The evolution of Ta clusters shows a significant effect on the crystal structure of the Ta film. The experimental results validate that the formation of alpha-Ta was attributed to the nucleation of larger Ta clusters. After being annealed at 600 degrees C, the alpha-Ta/graded Ta(N)/TaN multilayer film can still effectively block the diffusion of Cu. The mechanisms of the forming of the alpha-Ta and the thermal stability of the film stacks are characterized in detail.

引用

页数：6

共 49 条

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