Design and fabrication of ultrathin and highly thermal-stable α-Ta/graded Ta(N)/TaN multilayer as diffusion barrier for Cu interconnects

被引：5
|
作者：
Liu, C. H. [1 ]
Wang, Y. [1 ]
Liu, B. [1 ]
An, Z. [1 ]
Song, Z. X. [2 ]
Xu, K. W. [2 ]
机构：
[1] Sichuan Univ, Inst Nucl Sci & Technol, Minist Educ, Key Lab Radiat Phys & Technol, Chengdu 610064, Peoples R China
[2] Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Peoples R China
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2011年 / 44卷 / 07期
基金：
中国国家自然科学基金;
关键词：
TANTALUM FILMS; THIN-FILMS; STABILITY; LAYER; TA; MODEL; BETA;
D O I：
10.1088/0022-3727/44/7/075302
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A one-step strategy of magnetron sputtering deposition with dynamic regulation of sputtering atmosphere was developed to prepare alpha-Ta/graded Ta(N)/TaN multilayer films on the Si substrate. The evolution of Ta clusters shows a significant effect on the crystal structure of the Ta film. The experimental results validate that the formation of alpha-Ta was attributed to the nucleation of larger Ta clusters. After being annealed at 600 degrees C, the alpha-Ta/graded Ta(N)/TaN multilayer film can still effectively block the diffusion of Cu. The mechanisms of the forming of the alpha-Ta and the thermal stability of the film stacks are characterized in detail.
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页数：6
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