HIGH INSULATION VOLTAGE GATE-DRIVER APPLIED TO A SOLID STATE TRANSFORMER

被引：0

作者：

Cazakevicius, Fabricio E. ^{[1
]}

Quevedo, Josemar O. ^{[1
]}

Beltrame, Rafael C. ^{[1
]}

Pinheiro, Jose Renes ^{[1
]}

机构：

[1] Fed Univ Santa Maria UFSM, Power Elect & Control Res Grp GEPOC, BR-97105900 Santa Maria, RS, Brazil

来源：

2015 IEEE 13TH BRAZILIAN POWER ELECTRONICS CONFERENCE AND 1ST SOUTHERN POWER ELECTRONICS CONFERENCE (COBEP/SPEC) | 2015年

关键词：

dv/dt Immunity; Gate-driver; High Insulation Voltage; Isolated Power Supply; Parasitic Current; Solid State Transformer;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This paper presents the analysis, design and hardware implementation of a medium voltage gate-driver for a 3 kV IGBT application. The immediate application of such device is a 10 kW Electronic Transformer (Solid State Transformer) prototype, applied to a single phase 7967/220V distribution line. In this work, it is presented the gate-driver topology, the isolated power supply analysis and the experimental results for a 2 kV and 1 kW step-down dc-dc buck converter. This investigation aims to evaluate both the system operation and its response to common-mode parasitic current when subjected to high dv/dt transients.

引用

页数：6

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