Kinetic stabilization of Fe film on GaAs(100):: An in situ X-ray reflectivity study

被引：1

作者：

Noh, D. Y. ^{[2
]}

Kim, T. C. ^{[2
]}

Kim, Y. ^{[2
]}

Lee, J. -M. ^{[3
,4
]}

Oh, S. -J. ^{[3
,4
]}

Kim, J. -S. ^{[1
]}

机构：

[1] SookMyung Womens Univ, Dept Phys & Astron, Seoul 140742, South Korea

[2] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

[3] Seoul Natl Univ, Dept Phys & Astron, Seoul 151742, South Korea

[4] Seoul Natl Univ, Ctr Strongly Correlated Mat Res, Seoul 151742, South Korea

来源：

SURFACE SCIENCE | 2007年 / 601卷 / 23期

关键词：

Fe; GaAs; thin film; growth; interface; X-ray reflectivity;

D O I：

10.1016/j.susc.2007.09.025

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We study the growth of Fe films on GaAs(100) at a low temperature, 140 K, by in situ X-ray reflectivity (XRR) using synchrotron radiation. The XRR curves are well modeled by a single Fe layer on GaAs both at the growth temperature and after annealed at the room temperature. We found that the surface became progressively rougher during the growth with the growth exponent, beta(s) = 0.43 +/- 0.14. The observed beta(s) is attributed to the restricted interlayer diffusion at the low growth temperature. The change of the interface width during growth was minimal. When the Fe film was annealed to room temperature, the surface smoothed, keeping the interface width almost unchanged. The confinement of the interface derives from that the diffusion of Ga and As proceeds via the inefficient bulk diffusion, and the overlying Fe film is kinetically stabilized. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：5555 / 5558

页数：4

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