Modelling subnanosecond pulse generation by gain switching of high-power semiconductor lasers

被引：0

作者：

Golovin, V. S. ^{[1
]}

Slipchenko, S. O. ^{[1
]}

Pikhtin, N. A. ^{[1
]}

Kop'ev, P. S. ^{[1
]}

机构：

[1] Ioffe Inst, St Petersburg, Russia

来源：

INTERNATIONAL CONFERENCE LASER OPTICS 2020 (ICLO 2020) | 2020年

关键词：

semiconductor lasers; optical pulses; gain switching;

D O I：

10.1109/iclo48556.2020.9285732

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We analyse dynamic behaviour of broad-area edge-emitting semiconductor lasers under pulsed excitation. Our calculations show that in order to obtain high-power single-pulse output it is desirable to increase active area thickness and decrease optical confinement factor. Optimal values are defined by vertical refractive index profile and pulsed current source capabilities

引用

页数：1

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