Tunnel Electroresistance in Hf0.5Zr0.5O2-Based Ferroelectric Tunnel Junctions under Hysteresis: Approach of the Point Contact Model and the Linearized Thomas-Fermi Screening

被引：7
|
作者：
Useinov, Artur [1 ]
Jagga, Deepali [1 ]
Chang, Edward Yi [1 ]
机构：
[1] Natl Yang Ming Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu 30010, Taiwan
来源：
ACS APPLIED ELECTRONIC MATERIALS | 2022年 / 4卷 / 05期
关键词：
tunnel electroresistance; ferroelectric tunnel junction; hysteresis; quantum point contact model; monodomain (multidomain) ferroelectric barrier; linearized Thomas-Fermi screening; FeRAM; FILMS;
D O I：
10.1021/acsaelm.2c00022
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Quantum tunneling is the core phenomenological problem in the study of ferroelectric tunnel junctions. Recent advances in ultrathin film ferroelectric devices have yielded the possibility of achieving stable and switchable ferroelectric polarization P even in nanometer-thick Hf0.5Zr0.5O2 layers. In this study, the transport model of the point contact is adapted for the current density (J-V) simulation in metal-ferroelectric-metal [M1/FE/M2] and metal-dielectric-ferroelectric-dielectric-metal [M1/DE/FE/DE/M2] systems, including contributions from hysteresis. Important interfacial screening regions in metals are calculated by a simplified Thomas-Fermi model utilizing a linear approach and keeping an exact analytical solution for the electron transmission. Both systems were compared with each other and with related experimental data. The derived J-V curves are characterized by multiand monodomain ferroelectric behaviors.
引用
收藏
页码：2238 / 2245
页数：8
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