Domain wall in (FeCo)-Zr-O thin film profiled by spin-polarized scanning tunneling microscopy

被引：1
|
作者：
Gao, Youhui [1 ]
Shindo, Daisuke [2 ]
Ohnuma, Shigehiro [3 ]
Fujimori, Hiroyasu [3 ]
机构：
[1] Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China
[2] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Aoba Ku, Sendai, Miyagi 9808577, Japan
[3] Res Inst Elect & Magnet Mat, Sendai, Miyagi 9820807, Japan
来源：
SCRIPTA MATERIALIA | 2008年 / 59卷 / 05期
关键词：
spin-polarized scanning tunneling microscopy (STM); maze domain; (FeCo)-Zr-O thin film;
D O I：
10.1016/j.scriptamat.2008.05.011
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The domain structure of (FeCo)-Zr-O thin film was observed with spin-polarized scanning tunneling microscopy. A maze domain is characterized by a domain width of about 320 nm, and a wall energy of 4.97 erg cm(-2). The tunneling magnetoresistance (TMR) profile is fitted by a tanh function, and a wall thickness of about 100 nm is obtained. This indicates that the TMR is proportional to the angle between the tip and the film magnetizations. Effective exchange and anisotropy constants are estimated at 3.88 x 10(-6) erg cm(-1) and 3.98 x 10(5) erg cm(-3), respectively. (c) 2008 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：574 / 577
页数：4
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