Charged defects in wet SiO2/Si structure modified by RF oxygen plasma treatment

In the present paper the influence of oxygen rf plasma treatment on the properties of both Si and SiO2 sides of the wet thermal SiO2/Si interface was investigated. The defect concentrations of the oxide charge, dopant level and the interface trap density were obtained from capacitance-voltage (C-V) characterization. The amount of hydrogen trapped in the interfacial region was estimated from changes in the doping density of the silicon substrate. Generation and passivation of electrically active defect centers were found depending on the substrate temperature and the amount of hydrogen. Modification of the oxide and interface between Si and wet SiO2 is inferred. Plasma promoted release from the oxide bulk of hydrogen species is suggested.