Milliwatt operation of AlGaN-based single-quantum-well light emitting diode in the ultraviolet region

被引：104
|
作者：
Nishida, T [1 ]
Saito, H [1 ]
Kobayashi, N [1 ]
机构：
[1] NTT Corp, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
来源：
APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 25期
关键词：
D O I：
10.1063/1.1377854
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
By introducing a single-quantum-well active layer and a high-Al-content carrier blocking layer, the output power of an AlGaN-based ultraviolet light-emitting diode has been improved by one order of magnitude. Optical output of 1 mW was achieved at the emission peak wavelength of 341-343 nm. (C) 2001 American Institute of Physics.
引用
收藏
页码：3927 / 3928
页数：2
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