Modified atomic layer deposition of RuO2 thin films for capacitor electrodes

被引：45
|
作者：
Kim, Jin-Hyock [1 ]
Kil, Deok-Sin [1 ]
Yeom, Seung-Jin [1 ]
Roh, Jae-Sung [1 ]
Kwak, Noh-Jung [1 ]
Kim, Jin-Woong [1 ]
机构：
[1] Hynix Semicond Inc, Div Res & Dev, Icheon Si 467701, Kyoungki Do, South Korea
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 05期
关键词：
D O I：
10.1063/1.2767769
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The authors investigated the modified atomic layer deposition (ALD) of RuO2 films using bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)(2)] at a deposition temperature of 265 degrees C. Oxygen gas diluted with argon was supplied throughout all of the ALD steps. The growth rate of the modified ALD RuO2 was about 1.4 angstrom/cycle, which is higher than that of conventional Ru ALD due to the increase in the amount of Ru(EtCp)(2) adsorption per cycle, as well as the difference in the unit cell volumes of Ru and RuO2. The film thickness increased linearly with the number of cycles, and the incubation cycle in the initial stage was negligible. (c) 2007 American Institute of Physics.
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页数：3
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