Formation of ordered B structure on W(100)

被引:8
|
作者
Tuli, Farhana Jesmin [1 ]
Peng, Guansong [1 ]
Hossain, Shahadat [1 ,4 ]
Ninomiya, Kakeru [2 ]
Ahmed, Rezwan [1 ,5 ]
Nakagawa, Takeshi [1 ,3 ]
Mizuno, Seigi [1 ,3 ]
机构
[1] Kyushu Univ, Interdisciplinary Grad Sch Engn Sci, Dept Mol & Mat Sci, 6-1 Kasuga Koen, Kasuga, Fukuoka 8168580, Japan
[2] Tohoku Univ, Int Ctr Synchrotron Radiat Innovat Smart, Aoba Ku, 2-1-1 Katahira, Sendai, Miyagi 9808577, Japan
[3] Kyushu Univ, Fac Engn Sci, Dept Adv Mat Sci & Engn, 6-1 Kasuga Koen, Kasuga, Fukuoka 8168580, Japan
[4] Bangladesh Atom Energy Commiss, Atom Energy Ctr, 1018-A Bayezid Bostami Rd,East Nasirabad, Chattogram 4209, Bangladesh
[5] High Energy Accelerator Res Org KEK, Inst Mat Struct Sci, 1-1 Oho, Tsukuba, Ibaraki 3050801, Japan
关键词
Low energy diffraction; Scanning tunneling microscopy; Surface structure; Boron; SURFACE-STRUCTURES; TUNGSTEN BORIDES; PHASE; BORON; LEED; TRANSITION; INTERLAYER; MO(100);
D O I
10.1016/j.susc.2021.121906
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Adsorption of a metalloid, boron (B) on W(100) was investigated using low energy electron diffraction (LEED), X-ray photoelectron spectroscopy (XPS) and scanning tunneling microscopy (STM) in ultra-high vacuum (UHV) condition. W(100)-c(2 x 2)-B superstructure was formed by annealing at high temperature (1200 K). The best fit structure obtained from LEED analysis and STM observation manifested that B atom positioned at four-fold hollow site with the coverage of 0.5 ML, forming low B concentrated tungsten boride compound, W2B, on W (100) surface. The W atoms beneath B atoms moved downward to form B-W bonds for stabilizing the surface atoms. XPS confirmed B 1s peak shifting towards lower binding energy compared to pure B 1s, which indicated the charge transfer from W to B. No ordered structures other than c(2 x 2) have been observed with the increase of B, which indicates that B atoms diffuse into bulk, not forming ordered B sheets, due to the low diffusion barrier into bulk by annealing.
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页数:6
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