Optical and electrical characterisation of iron-doped ZnO

被引：0
|
作者：
Gaspar, C [1 ]
Pereira, L [1 ]
Costa, FM [1 ]
Monteiro, T [1 ]
机构：
[1] Univ Aveiro, Dept Fis, P-3810 Aveiro, Portugal
来源：
SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS | 2000年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work the 1.7855 eV luminescence and electrical DC behaviour in polycrystalline ZnO are studied. Luminescence transient decay times of 1.4 ms and 23 ins are found at 11 K. While the first one remains constant with temperature the slower one decreases reaching a value of 5 ms at 160 K with an activation energy of 76 meV. A fast decrease of the intensity above 30K with activation energy of 8 meV was found. Electrical DC measurements show a Space Charge Limited Current behaviour with an activation energy of 40 meV above 30K. For lower temperatures a Variable Range Hopping was found. Based on these data an excitonic model for the centre is proposed.
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页码：326 / 329
页数：4
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