(100) oriented diamond film prepared on amorphous carbon buffer layer containing nano-crystalline diamond grains

被引:6
|
作者
Lu, Yunxiang [1 ,2 ]
Man, Weidong [1 ]
Wang, Bo [2 ]
Rosenkranz, Andreas [3 ]
Yang, Mingyang [2 ]
Yang, Ke [2 ]
Yi, Jian [2 ]
Song, Hui [2 ]
Li, He [2 ]
Jiang, Nan [2 ]
机构
[1] Wuhan Inst Technol, Prov Key Lab Plasma Chem & Adv Mat, Wuhan 430073, Peoples R China
[2] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Marine New Mat & Related Technol, Zhejiang Key Lab Marine Mat & Protect Technol, Ningbo 315201, Peoples R China
[3] Univ Chile, Dept Chem Engn Biotechnol & Mat, Ave Beauchef 851, Santiago, Chile
来源
关键词
(100) oriented diamond films; Single crystal diamond plate; Amorphous carbon buffer layer; Lateral growth; Transmission electron microscopy; HOT-FILAMENT CVD; ELECTRICAL-PROPERTIES; GROWTH; MORPHOLOGY; BEHAVIOR; SILICON; NUCLEATION; TEXTURE; QUALITY; MPCVD;
D O I
10.1016/j.surfcoat.2020.125368
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this study, amorphous carbon buffer layer containing nano-crystalline diamond grains was pre-deposited on single crystal silicon (Si) wafers. (100) oriented diamond films were prepared on the buffer layer by increasing deposition temperature. Morphology observation demonstrated that (100) oriented diamond plates appear on the buffer layer, thus realizing the deposition of (100) oriented diamond film. Transmission electron microscopy confirmed that (100) oriented diamond dominates deposition at high temperatures, leading to the formation of the (100) oriented diamond plates. The fast lateral growth of nano-crystalline diamond grains with (100) orientation in the buffer layer is the main driving force for the deposition of (100) oriented diamond film, providing a new route for the preparation of (100) oriented diamond films.
引用
收藏
页数:5
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