A compact model for oxide breakdown failure distribution in ultrathin oxides showing progressive breakdown

被引：27
|
作者：
Tons, Santi [1 ]
Wu, Ernest Y. [2 ]
Sune, Jordi [1 ]
机构：
[1] Univ Autonoma Barcelona, Dept Elect Engn, E-08193 Barcelona, Spain
[2] IBM Corp, Microelect Div, Essex Jct, VT 05452 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 08期
关键词：
dielectric breakdown (BD); MOS devices; reliability theory;
D O I：
10.1109/LED.2008.2001178
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The cumulative distribution of the failure time, which includes the time to first breakdown (BD) and the progressive current growth time, is the function of interest for reliability of ultrathin gate oxides. Depending on oxide area and stress conditions, oxide failure is determined by a single BD spot or by multiple competing spots. In this letter, we present an analytical compact model for the final failure distribution which is valid for any failure percentile and which is applicable to both the single and the multiple BD spot limits. This model is intended to be the core of a reliability assessment methodology either for the SiO2-based or high-k gate insulators of interest for the hp45 technology node and beyond.
引用
收藏
页码：949 / 951
页数：3
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