Logistic modeling of progressive breakdown in ultrathin gate oxides

被引：1

作者：

Miranda, E ^{[1
]}

Bandiera, L ^{[1
]}

Cester, A ^{[1
]}

Paccagnella, A ^{[1
]}

机构：

[1] Univ Buenos Aires, Fac Ingn, RA-1063 Buenos Aires, DF, Argentina

来源：

ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2003年

关键词：

D O I：

10.1109/ESSDERC.2003.1256816

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The sigmoidal behavior exhibited by the current-time characteristics of constant voltage stressed MOS capacitors with ultrathin oxides is ascribed to a self-constrained increase of the leakage sites population that assist the conduction process between the electrodes. To analytically describe this dynamical process we consider a classical model of population growth theories such as the Verhulst differential equation. The role played by the background tunneling current in the detection of the breakdown event is also discussed.

引用

页码：83 / 86

页数：4

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