Cross-talk characterization of dense single-photon avalanche diode arrays in CMOS 150-nm technology

被引：10

作者：

Xu, Hesong ^{[1
,2
]}

Pancheri, Lucio ^{[2
]}

Braga, Leo H. C. ^{[1
]}

Dalla Betta, Gian-Franco ^{[2
]}

Stoppa, David ^{[1
,2
]}

机构：

[1] Fdn Bruno Kessler, Integrated Radiat & Image Sensors Div, Via Sommar 18, I-38123 Trento, Italy

[2] Univ Trento, Dept Ind Engn, Via Sommar 5, I-38123 Trento, Italy

来源：

OPTICAL ENGINEERING | 2016年 / 55卷 / 06期

关键词：

single-photon avalanche diode; cross talk; CMOS; PHOTODIODES;

D O I：

10.1117/1.OE.55.6.067102

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Cross-talk characterization results of high-fill-factor single-photon avalanche diode (SPAD) arrays in CMOS 150-nm technology are reported and discussed. Three different SPAD structures were designed with two different sizes (15.6 and 25.6 mu m pitch) and three guard ring widths (0.6, 1.1, and 1.6 mu m). Each SPAD was implemented in an array, composed of 25 (5 x 5) devices, which can be separately activated. Measurement results show that the average cross-talk probability is well below 1% for the shallow-junction SPAD structure with 15.6 mu m pitch and 39.9% fill factor, and 1.45% for the structure with 25.6 mu m pitch and 60.6% fill factor. An increase of cross-talk probability with the excess bias voltage is observed. (C) 2016 Society of Photo-Optical Instrumentation Engineers (SPIE)

引用

页数：5

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